*., fi ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 BD545, BD545a, BD545b, BD545c npn silicon power transistors ? designed for complementary use with the bd546 series ? 85 w at 25c case temperature ? 15 a continuous collector current ? customer-specified selections available b c. c x' t t sot-93 (to package p view) 1 ?o 3 ^ x o >* pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25c case temperature (unless otherwise noted) rating collector-base voltage (ie = 0) collector-emitter voltage (ib = 0) (see note 1) bd54s BD545a BD545b BD545c BD545 BD545a BD545b BD545c emitter-base voltage continuous collector current continuous device dissipation at (or below) 25c case temperature (see note 2) continuous device dissipation at (or below) 25c free air temperature (see note 3) operating free air temperature range operating junction temperature range storage temperature range lead temperature 3.2 mm from case for 10 seconds symbol vcbo vceo vebo ic ptot plot ta tj tstg tl value 40 60 80 100 40 60 80 100 5 15 85 3.5 -65 to +150 -65 to +150 -65 to +150 260 unit v v v a w w c c "c c notes: 1. these values apply when the base-emitter diode is open circuited. 2. derate linearly to 150c case temperature at the rate of 0.68 w/c. 3. derate linearly to 150c free air temperature at the rate of 28 mw/c. nj seini electrical characteristics at 25c case temperature parameter collector-emitter (br)ceo breakdown voltage collector-emitter ces cut-off current collector cut-off 'ceo current emitter cut-off 'ebo current forward current hpf transfer ratio collector-emitter ce(s3t) saturation voltage base-emitter be voltage small signal forward 16 current transfer ratio small signal forward current transfer ratio test conditions BD545 f?- -? ss '""**? bd54sc vce= 40v vbe = 0 BD545 vce = 60v vbe = 0 BD545a vce= 80v vbe = BD545b vce=100v vbe = 0 BD545c vce= 30v i8 = 0 BD545/545a vce= 60v ib = 0 BD545b/545c veb= sv lc = 0 vce= 4v lc= 1a vce= 4v lc= 5 a (see notes 4 and 5) vce= 4v lc= 10a ib = 625ma lc= 5 a , k, 4 ? jc, ? b = 2a ic=10a (see notes 4 and 5) vce= 4v lc= 10 a (see notes 4 and 5) vce= 10v ic = 0.5a f=1khz vce= 10v ic = 0.5a f=1mhz min 40 60 80 100 60 25 10 20 3 typ max 0.4 0.4 0.4 0.4 0.7 0.7 1 0.8 1 1.8 unit v ma ma ma v v notes: 4. these parameters must be measured using pulse techniques, tp = 300 us, duty cycle ? 2%. 5. these parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics parameter rejo junction to case thermal resistance roja junction to free air thermal resistance min typ max 1.47 35.7 unit 'caw c/w resistive-load-switching characteristics at 25c case temperature parameter ton turn-on time t0(f turn-off time test conditions * ic = 6a lb(on) = 0.6a lb(0ff) = -0.6a vbe(oft) = -4v rl = 50 tp = 20 us, dc ?_ 2% min typ 0.6 1 max unit ms us voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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